Title :
Parasitic effect analysis for a differential LNA design
Author :
Kim, Moon-Sun ; Yi, Jin-Sung ; Hyung-Joun Yoo
Author_Institution :
Syst. Integration Technol. Inst., Inf. & Commun. Univ., Daejeon, South Korea
Abstract :
In this paper, parasitic effect of CMOS differential LNA is discussed. The sources of parasitic effects are MOS transistor, differential structure, pad, and spiral inductor. Those parasitic effects are analyzed, and differential LNA is simulated with parasitic effects and measured.
Keywords :
CMOS integrated circuits; MOSFET; differential amplifiers; integrated circuit design; semiconductor device models; CMOS differential LNA; MOS transistor; differential LNA design; differential structure; pad; parasitic effect; simulation; spiral inductor; CMOS technology; Circuit simulation; Inductors; MOSFETs; Parasitic capacitance; RF signals; Radio frequency; Semiconductor device modeling; Signal processing; Spirals;
Conference_Titel :
Microelectronics, 2003. ICM 2003. Proceedings of the 15th International Conference on
Print_ISBN :
977-05-2010-1
DOI :
10.1109/ICM.2003.1287753
