Gamma-radiation dosimetry with magnetic Czochralski silicon diode

Author

Camargo, F. ; Gon?§alves, J. A C ; Khoury, H.J. ; Tuominen, E. ; Hark?¶nen, J. ; Bueno, C.C.

Author_Institution

Inst. de Pesquisas Energeticas e Nucl., Sao Paulo

Volume

1

fYear

2007

Firstpage

696

Lastpage

698

Abstract

This work presents the preliminary results obtained with a rad-hard MCz silicon diode as a high-dose gamma dosimeter. This device is a p⁺/n/n⁺ junction diode, made on MCz Si wafer manufactured by Okmetic Oyj., Vantaa, Finland and processed by the Microelectronics Center of Helsink University of Technology. The results obtained about the photocurrent registered and total charge accumulated on the diode as a function of the dose are presented. The dosimetric response of the device has shown a good linearity within the dose range of 500 Gy to 6 kGy.

Keywords

dosimeters; dosimetry; elemental semiconductors; gamma-ray detection; semiconductor diodes; silicon radiation detectors; Microelectronics Center of Helsink University of Technology; Si; gamma-radiation dosimetry; high-dose gamma dosimeter; junction diode; magnetic Czochralski silicon diode; photocurrents; rad-hard MCz silicon diode; radiation absorbed dose 500 Gy to 6 kGy; Dosimetry; Manufacturing processes; Microelectronics; Photoconductivity; Plastic products; Radiation detectors; Radiation hardening; Semiconductor diodes; Semiconductor radiation detectors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium Conference Record, 2007. NSS '07. IEEE

ISSN

1095-7863

Print_ISBN

978-1-4244-0922-8

Electronic_ISBN

1095-7863

Type

conf

DOI

10.1109/NSSMIC.2007.4436428

Filename

4436428