Highly linear broadband GaN-based low-noise amplifier

Author

Andrei, Cristina ; Liero, Armin ; Lossy, Richard ; Heinrich, Wolfgang ; Rudolph, Matthias

Author_Institution

Dept. of RF & Microwave Tech., Brandenburg Univ. of Technol. Cottbus, Cottbus, Germany

fYear

2010

Firstpage

36

Lastpage

38

Abstract

A highly linear broadband low-noise amplifier is presented in this paper. The circuit is based on a GaN power transistor, directly bonded into a hybrid microstrip circuit. In order to achieve the highest linearity possible, a large device is used and biased in class A. Broadband low-noise operation in the range of 1.7 - 2.3 GHz is achieved, with a gain of about 15 dB and a noise figure below 2 dB, although matching of the large transistor cell is tedious. A record output IP3 of 49 dBm is measured for this device. This proves that the GaN technology is capable of combining extremely high linearity with low noise performance.

Keywords

gallium compounds; low noise amplifiers; microstrip circuits; nitrogen; power transistors; wideband amplifiers; GaN; GaN power transistor; broadband low-noise operation; frequency 1.7 GHz to 2.3 GHz; highly linear broadband low-noise amplifier; hybrid microstrip circuit; Bonding; Circuits; Crosstalk; Gallium nitride; HEMTs; Low-noise amplifiers; MODFETs; Noise figure; Packaging; Power transistors; Amplifier noise; Microwave FET amplifiers; Nonlinear Distortion; Robustness; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2010 German

Print_ISBN

978-1-4244-4933-0

Electronic_ISBN

978-3-9812668-1-8

Type

conf

Filename

5498249