Title :
Wafer-level light emitting diode (WL-LED): An innovative approach for cost-effective very high power lighting
Author :
Cai, Y. ; Zhang, Y.B. ; Xu, F. ; Zhao, D.S. ; Huang, H.J. ; Wang, W. ; Xu, J.W. ; Shi, G.Y. ; Zhang, B.S.
Author_Institution :
Key Lab. of Nanodevices & Applic., Suzhou Inst. of Nano-tech & Nano-bionics, Suzhou, China
Abstract :
A very high power wafer level light emitting diode (WL-LED) has been successfully fabricated on 2 inches InGaN/GaN epi-wafer based on high voltage design. The maximum light output power (LOP) was measured to be 157W with an external quantum efficiency (EQE) of 24%.
Keywords :
LED lamps; lighting; EQE; LOP; WL-LED; cost-effective very high power lighting; external quantum efficiency; high voltage design; innovative approach; maximum light output power; wafer-level light emitting diode; Assembly; Gallium nitride; Heating; Light emitting diodes; Light sources; Lighting; Substrates;
Conference_Titel :
Solid State Lighting (SSLCHINA), 2014 11th China International Forum on
Print_ISBN :
978-1-4799-6696-7
DOI :
10.1109/SSLCHINA.2014.7127240
