• DocumentCode
    3594338
  • Title

    Ternary TlMeX2 compounds for MEMS application

  • Author

    Lyskouski, Viachaslau ; Nelayev, Vladislav

  • Author_Institution
    Micro- & Nanoelectron. Dept., Belarusian State Univ. of Inf. & Radioelectron., Minsk, Belarus
  • fYear
    2010
  • Firstpage
    250
  • Lastpage
    253
  • Abstract
    Results of ab initio simulation of electronic and magnetic properties of TlMeX2 compounds (Me=Ga, In. Tl; X=S, Se, Te) under the of strain deformation influence are presented. It was confirmed theoretically the experimental data about prominent anisotropy of various physical properties of these compounds, i.e. about perspective of investigated nano-structured objects as a materials for using in various nano-devices, in particular, in sensor and micro-electro-mechanical systems.
  • Keywords
    deformation; gallium compounds; indium compounds; micromechanical devices; GaS2; GaTe2; InSe2; InTe2; MEMS; electronic properties; magnetic properties; microelectromechanical systems; nanodevices; sensor; strain deformation; ternary TlMeX2 compounds; Anisotropic magnetoresistance; Consumer electronics; Crystalline materials; Crystals; Dielectric materials; Electrons; Ferroelectric materials; Magnetic properties; Microelectromechanical systems; Micromechanical devices; MEMS systems; TlMeX2 compounds; VASP; ab initio simulation; anisotropy; electron; molecular dynamics; quanum-mechanics approach; sensors; spin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Perspective Technologies and Methods in MEMS Design (MEMSTECH), 2010 Proceedings of VIth International Conference on
  • Print_ISBN
    978-1-4244-7325-0
  • Electronic_ISBN
    978-966-2191-11-0
  • Type

    conf

  • Filename
    5499259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3594338