Title :
Enabling circuit design using FinFETs through close ecosystem collaboration
Author :
Sheu, Bing J. ; Chih-Sheng Chang ; Yen-Huei Chen ; Ken Wang ; Kuo-Ji Chen ; Yung-Chow Peng ; Li-Chun Tien ; Ming-Hsiang Song ; Hou, Chunping ; Sun, Jack Y.-C ; Chenming Hu
Author_Institution :
TSMC, Hsinchu, Taiwan
Abstract :
Double-patterning lithography is required at 20 nm node for planar CMOS. At the 16 / 14 nm node, in order to deliver attractive amount of Performance-Power-Area enhancement, 3-D FinFETs are required. Close collaboration at design ecosystem among fabrication foundry, EDA vendors, IP vendors, packaging vendors, and design houses is crucial for successful migration to FinFET circuits. This paper describes key issues in enabling circuit design using FinFETs and how to address them effectively.
Keywords :
CAD; CMOS integrated circuits; MOSFET; lithography; network synthesis; semiconductor device packaging; 3D FinFET circuit; CAD tool; EDA vendor; IP vendor; Performance-Power-Area enhancement; circuit design; close ecosystem collaboration; design ecosystem; double-patterning lithography; fabrication foundry; packaging vendor; planar CMOS; size 20 nm; CMOS integrated circuits; Doping; FinFETs; Integrated circuit modeling; Logic gates; Semiconductor device modeling;
Conference_Titel :
VLSI Technology (VLSIT), 2013 Symposium on
Print_ISBN :
978-1-4673-5226-0
