DocumentCode
3594579
Title
Absence of quantized energy-states local diffusion in semiconductor quantum-dash structures
Author
Tan, C.L. ; Tan, C.K. ; Djie, H.S. ; Ooi, B.S.
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2010
Firstpage
1
Lastpage
2
Abstract
We present an analysis of InAs/InAlGaAs/InP quantum-dash structures utilizing different degrees of postgrowth-lattice-disordering. The observation of digital transitions among quantized states discards the origins of multiple excited states from a single group of dash ensembles.
Keywords
III-V semiconductors; excited states; gallium arsenide; indium compounds; lattice dynamics; semiconductor quantum dots; InAs-InAlGaAs-InP; dash ensembles; excited states; local diffusion; postgrowth-lattice-disordering; quantized energy-states; semiconductor quantum-dash structures; Atomic force microscopy; Bandwidth; Energy states; Indium phosphide; Laser excitation; Laser transitions; Plasma temperature; Quantum dot lasers; Quantum well lasers; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on
Print_ISBN
978-1-55752-890-2
Electronic_ISBN
978-1-55752-890-2
Type
conf
Filename
5499998
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