Title :
A novel technique to determine the lateral distribution of interface states and oxide-trapped charges in LDD MOSFET´s
Author :
Lee, G.H. ; Su, J. ; Chung, Steve S.
Author_Institution :
National Chiao Tung University
fDate :
6/16/1905 12:00:00 AM
Keywords :
CMOS process; Charge carrier processes; Charge pumps; Current measurement; Interface states; MOSFET circuits; Pulse measurements; Stress; Testing; Threshold voltage;
Conference_Titel :
Electron Devices and Materials Symposium, 1994. EDMS 1994. 1994 International
DOI :
10.1109/EDMS.1994.771278
