Title :
Electrical performance of dense and isolated n-type FinFETs in micro-loading effect
Author :
Mu-Chun Wang ; Jian-Liang Lin ; De-Huang Jhuang ; Wen-Shiang Liao ; Yi-De Lai ; Wen-How Lan ; Shea-Jue Wang
Author_Institution :
Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan
Abstract :
The micro-loading effect in this work seems obviously. According to the extraction of drive current (IDS) for dense and isolated FinFET devices at the on-drawn layout (W/L=0.11/0.5 (μm/μm), the ratio with 11-fin fingers vs. single fin was 10.01. Using the re-work concept to derive the un-etching depth (ΔH) located at the inner sidewall fin height was still around 2.4 nm as the outer sidewall height (Hfin) was 90 nm.
Keywords :
MOSFET; etching; isolation technology; dense n-type FinFET; drive current extraction; electrical performance; inner sidewall fin; isolated n-type FinFET; microloading effect; on-drawn layout; unetching depth; Channel estimation; Conferences; FinFETs; Fingers; Logic gates; Silicon; FinFET; dense; drive current; isolated; micro-loading; swing;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
DOI :
10.1109/ISNE.2015.7131985
