DocumentCode :
3595061
Title :
Computer modeling of amorphous silicon tandem cells
Author :
Willemen, J.A. ; Zeman, M. ; Metselaar, J.W.
Author_Institution :
Lab. for Electron. Components, Technol. & Mater., Delft Univ. of Technol., Netherlands
Volume :
1
fYear :
1994
Firstpage :
599
Abstract :
We have used a new modeling approach for simulation of a-Si:H tandem cells. The trap assisted tunneling model and an enhanced effective extended state mobility were used to model the recombination and transport in the high field region of the tunnel recombination junction. With this approach, realistic tandem cell characteristics could be obtained. We illustrate how modeling can be used for the analysis of multi-junction cells
Keywords :
amorphous semiconductors; carrier mobility; electron-hole recombination; elemental semiconductors; hydrogen; power engineering computing; semiconductor device models; silicon; simulation; solar cells; tunnelling; Si:H; a-Si:H tandem cells; computer modeling; enhanced effective extended state mobility; multi-junction cells; recombination modelling; transport modelling; trap assisted tunneling model; tunnel recombination junction; Amorphous silicon; Charge carrier processes; Computational modeling; Integral equations; Photonic band gap; Photovoltaic cells; Poisson equations; Radiative recombination; Tail; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Print_ISBN :
0-7803-1460-3
Type :
conf
DOI :
10.1109/WCPEC.1994.520032
Filename :
520032
Link To Document :
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