Title :
ZnO-Ag sputtering deposition on a-Si solar cells
Author :
Hayashi, Katsuhiko ; Kondo, Masataka ; Ishikawa, Atsuo ; Yamagisi, H.
Author_Institution :
Electron. Mater. Res. Lab., Kaneka Corp., Shiga, Japan
Abstract :
In order to produce large area amorphous silicon solar cell modules and to simplify the module production process, a continuous ZnO/Ag sputtering deposition process has been applied. The authors found that by means of a continuous ZnO/Ag sputtering deposition method, an adhesive a-Si/electrode contact can be realized. They compared short circuit currents of Al,ZnO/Al and ZnO/Ag back side contact cells and confirmed short circuit current increase by application of ZnO/Ag back side contact. They found that the series resistance is severely depend on the conditions during the first stage of ZnO deposition. They confirmed the reliability of ZnO/Ag structure as the back side contact through high temperature high humidity tests. After 310 hours of an accelerated light induced degradation test, which corresponds to one year light exposure, a 100 cm2 integrated a-Si tandem solar cell kept an efficiency higher than 8.5%
Keywords :
II-VI semiconductors; amorphous semiconductors; electrical contacts; elemental semiconductors; life testing; semiconductor device testing; semiconductor growth; semiconductor thin films; short-circuit currents; silicon; silver; solar cell arrays; solar cells; sputter deposition; sputtered coatings; zinc compounds; Si; ZnO-Ag; a-Si solar cells; accelerated light induced degradation test; amorphous semiconductor; back side contact; electrode contact; high temperature high humidity tests; short circuit currents; sputtering deposition process; Amorphous silicon; Continuous production; Electrodes; Humidity; Integrated circuit reliability; Photovoltaic cells; Short circuit currents; Sputtering; Temperature; Zinc oxide;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.520051
