Enhancement of effective electromechanical coupling factor by mass loading in layered SAW device structures

Author

Gongbin Tang ; Tao Han ; Teshigahara, Akihiko ; Iwaki, Takao ; Hashimoto, Ken-ya

Author_Institution

Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai, China

fYear

2015

Firstpage

416

Lastpage

419

Abstract

This paper describes drastic enhancement of K_e² by mass loading in layered SAW device structures such as the ScAlN film/Si substrate. It is shown that this phenomenon is obvious even when an amorphous SiO₂ film is deposited on the top surface for temperature compensation. This enhancement is caused by SAW energy confinement to the top surface of the ScAlN layer where the IDT is placed. This K_e² enhancement is also found when other electrode and/or substrate materials are employed.

Keywords

aluminium compounds; compensation; piezoelectricity; scandium compounds; surface acoustic wave devices; ScAlN-Si; Si; effective electromechanical coupling factor; electrode materials; layered SAW device structures; mass loading; substrate materials; temperature compensation; Electrodes; Films; Loading; Silicon; Substrates; Surface acoustic wave devices; Surface acoustic waves; ScAlN film; SiO2 overlay; effective electro-mechanical coupling factor; layered structure; mass loading;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium & the European Frequency and Time Forum (FCS), 2015 Joint Conference of the IEEE International

Print_ISBN

978-1-4799-8865-5

Type

conf

DOI

10.1109/FCS.2015.7138870

Filename

7138870