Title :
Enhancement of effective electromechanical coupling factor by mass loading in layered SAW device structures
Author :
Gongbin Tang ; Tao Han ; Teshigahara, Akihiko ; Iwaki, Takao ; Hashimoto, Ken-ya
Author_Institution :
Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai, China
Abstract :
This paper describes drastic enhancement of Ke2 by mass loading in layered SAW device structures such as the ScAlN film/Si substrate. It is shown that this phenomenon is obvious even when an amorphous SiO2 film is deposited on the top surface for temperature compensation. This enhancement is caused by SAW energy confinement to the top surface of the ScAlN layer where the IDT is placed. This Ke2 enhancement is also found when other electrode and/or substrate materials are employed.
Keywords :
aluminium compounds; compensation; piezoelectricity; scandium compounds; surface acoustic wave devices; ScAlN-Si; Si; effective electromechanical coupling factor; electrode materials; layered SAW device structures; mass loading; substrate materials; temperature compensation; Electrodes; Films; Loading; Silicon; Substrates; Surface acoustic wave devices; Surface acoustic waves; ScAlN film; SiO2 overlay; effective electro-mechanical coupling factor; layered structure; mass loading;
Conference_Titel :
Frequency Control Symposium & the European Frequency and Time Forum (FCS), 2015 Joint Conference of the IEEE International
Print_ISBN :
978-1-4799-8865-5
DOI :
10.1109/FCS.2015.7138870
