Title :
Acoustic power gain induced by 2D electron drifting
Author :
Lei Shao ; Pipe, Kevin P.
Author_Institution :
Dept. of Mech. Eng., Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
In this work, amplification of surface acoustic waves (SAWs) by electron drift in a nanometer-scale two-dimensional electron gas (2DEG) is analyzed analytically. We compare the amount of acoustic power gain per SAW radian produced by electron drift in a bulk GaN thin film layer and in a GaN-based 2DEG layer. Calculations suggest that acoustic amplification in a 2DEG is independent on the SAW frequency while only a very narrow bandwidth of SAWs could be amplified in bulk. Furthermore, the peak power gain per SAW radian occurs at a more practical carrier density for a 2DEG than for a bulk material.
Keywords :
III-V semiconductors; acoustic wave amplification; carrier density; gallium compounds; semiconductor thin films; surface acoustic waves; two-dimensional electron gas; wide band gap semiconductors; 2D electron drifting; GaN; GaN-based 2DEG layer; SAW amplification; acoustic power gain; bulk GaN thin film layer; carrier density; nanometer-scale twodimensional electron gas analysis; surface acoustic wave amplification; Charge carrier density; Electron mobility; HEMTs; MODFETs; Surface acoustic waves; III–V nitride semiconductors; acoustoelectric coupling; surface acoustic wave; two-dimensional electron gas;
Conference_Titel :
Frequency Control Symposium & the European Frequency and Time Forum (FCS), 2015 Joint Conference of the IEEE International
Print_ISBN :
978-1-4799-8865-5
DOI :
10.1109/FCS.2015.7138894
