Acoustic power gain induced by 2D electron drifting

Author

Lei Shao ; Pipe, Kevin P.

Author_Institution

Dept. of Mech. Eng., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2015

Firstpage

504

Lastpage

508

Abstract

In this work, amplification of surface acoustic waves (SAWs) by electron drift in a nanometer-scale two-dimensional electron gas (2DEG) is analyzed analytically. We compare the amount of acoustic power gain per SAW radian produced by electron drift in a bulk GaN thin film layer and in a GaN-based 2DEG layer. Calculations suggest that acoustic amplification in a 2DEG is independent on the SAW frequency while only a very narrow bandwidth of SAWs could be amplified in bulk. Furthermore, the peak power gain per SAW radian occurs at a more practical carrier density for a 2DEG than for a bulk material.

Keywords

III-V semiconductors; acoustic wave amplification; carrier density; gallium compounds; semiconductor thin films; surface acoustic waves; two-dimensional electron gas; wide band gap semiconductors; 2D electron drifting; GaN; GaN-based 2DEG layer; SAW amplification; acoustic power gain; bulk GaN thin film layer; carrier density; nanometer-scale twodimensional electron gas analysis; surface acoustic wave amplification; Charge carrier density; Electron mobility; HEMTs; MODFETs; Surface acoustic waves; III–V nitride semiconductors; acoustoelectric coupling; surface acoustic wave; two-dimensional electron gas;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium & the European Frequency and Time Forum (FCS), 2015 Joint Conference of the IEEE International

Print_ISBN

978-1-4799-8865-5

Type

conf

DOI

10.1109/FCS.2015.7138894

Filename

7138894