DocumentCode :
3596468
Title :
Structural simulation and design of semiconductor laser optical amplifiers
Author :
Failla, A.G. ; Bava, G.P. ; Montrosset, I.
Author_Institution :
Dipartimento di Elettronica, Politecnico di Torino, Italy
fYear :
1989
fDate :
10/27/1989 12:00:00 AM
Abstract :
The purpose of this work is to study, through a careful analysis of the optical waveguide characteristics and an accurate design of the antireflection coatings (ARC), the possibility of realizing polarization-independent semiconductor optical amplifiers. The structural design of BH (buried heterostructure) and ridge waveguide (RW) devices is considered, varying the active and cladding layer thickness and the stripe width. For these structures, a new simple and accurate design procedure of the ARC, that takes also into account the waveguide transverse limitation, is proposed
Keywords :
antireflection coatings; optical design techniques; optical waveguides; semiconductor junction lasers; antireflection coatings; buried heterostructure; cladding layer; optical waveguide; ridge waveguide; semiconductor laser optical amplifiers; simulation; stripe width; waveguide transverse limitation;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Optical Amplifiers for Communications, IEE Colloquium on
Type :
conf
Filename :
198878
Link To Document :
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