Material engineering in Cylindrical Surrounding Double Gate (CSDG) MOSFETs for enhanced electrostatic integrity and RF performance

Author

Verma, Jay Hind K. ; Gupta, Mridula ; Haldar, Subhasis ; Gupta, R.S.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

fYear

2014

Firstpage

1

Lastpage

4

Abstract

This paper investigates influence of material engineering on the performance parameter of (Cylindrical Surrounding Double Gate) CSDG MOSFET for improvement in performance. CSDG MOSFETs are evaluated for various parameters such as surface potential, electric field, drain on current, off current, transconductance, cut-off frequency and total gate input capacitance. The comparison of the gate material engineering on CSDG MOSFET has been done on the normal CSDG MOSFET incorporating dual materials at gate electrode, using the ATLAS 3D device simulator. The result shows that, with incorporation of dual materials on the gate electrode, the device performance parameter improves by shifting the higher electric field and minimum surface potential more towards the source side than in the normal CSDG MOSFET.

Keywords

MOSFET; electric fields; electrochemical electrodes; semiconductor device models; surface potential; ATLAS 3D device simulator; RF performance; cylindrical surrounding double gate MOSFET; dual materials; electric field; electrostatic integrity; gate electrode; gate material engineering; surface potential; Electric fields; Electric potential; Logic gates; MOSFET; Metals; Performance evaluation; Transconductance; CSDG MOSFET; cut-off frequency; dielectric constant; material engineering; transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151128

Filename

7151128