Optoelectronic properties of graphene silicon nano-texture

Author

Brahmanandam, J. ; Ajmalghan, M. ; Abhilash, R.K. ; Mahapatra, D.R. ; Rahaman, M.R. ; Hegde, G.M.

Author_Institution

Dept. of Aerosp. Eng., Indian Inst. of Sci., Bangalore, India

fYear

2014

Firstpage

1

Lastpage

4

Abstract

Graphene on silicon with silicon dioxide quantum dots is a promising opto-electronic material. The optical band gap and the corresponding optical conductivity are estimated using the density functional approach with the combination of molecular dynamics. The regular repeating unit cell of graphene silicon nano-texture is identified using the classical molecular dynamics simulations. Electronic calculations predict the optical band gap is around 0.2 eV and the optical conductivity is identified to be 0.3 times the quantum conductance.

Keywords

density functional theory; graphene; molecular dynamics method; optical conductivity; semiconductor quantum dots; silicon compounds; texture; C-Si; density functional approach; graphene silicon nanotexture; molecular dynamics; optical band gap; optical conductivity; quantum conductance; silicon dioxide quantum dots; Conductivity; Electron optics; Graphene; Optical films; Photonic band gap; Silicon; Substrates; Band structure; Graphene; Optical conductivity; Silicon; Silicon dioxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151132

Filename

7151132