Detection of multiple trap distribution from steady state current-voltage characteristics of organic diode

Author

Rizvi, S.M.H. ; Mazhari, B.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Kanpur, Kanpur, India

fYear

2014

Firstpage

1

Lastpage

4

Abstract

Traps are commonly found in organic semiconductors and their presence distinctly distorts the current-voltage (I - V) characteristics of an organic diode. The present work describes the application of the recently proposed G(V) technique in detecting the presence of multiple trap distribution. G - V characteristics show significantly different signatures of Gaussian and exponential traps which allow easy detection of more than one type of trap distribution. Numerical simulations coupled with experimental results of Poly-(3-hexylthiophene) (P3HT) and blends of P3HT and [6,6] phenyl C61 butyric acid methyl ester (PCBM) diodes show the presence of shallow and deep traps with different distributions.

Keywords

electron traps; hole traps; organic semiconductors; semiconductor diodes; G-V characteristic; Gaussian trap; I-V characteristic; P3HT; PCBM diode; [6,6] phenyl C61 butyric acid methyl ester; exponential trap; multiple trap distribution detection; organic diode; organic semiconductor; poly-(3-hexylthiophene); steady state current-voltage characteristic; Electron traps; Exponential distribution; Gaussian distribution; Organic light emitting diodes; Organic semiconductors; Physics; Semiconductor diodes; current-voltage; multiple traps; organic semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151136

Filename

7151136