Title :
The effect of different silicon nitride passivation recipes on the DC characteristics of AlGaN/GaN HEMTs
Author :
Laishram, Robert ; Kumar, Sunil ; Dayal, Sindhu ; Chaubey, Rupesh K. ; Raman, R. ; Sehgal, B.K.
Author_Institution :
Solid state Phys. Lab., Defence Res. & Dev. Organ., Delhi, India
Abstract :
The changes in dc characteristics of AlGaN/GaN HEMT after ICP-CVD silicon nitride (SiNx) passivation using two different recipes were investigated. Room temperature Raman analysis was performed to determine the stress state of the AlGaN layer after SiNx passivation. The changes in the stress state of the device after passivation was correlated with the shift in threshold voltage and changes in drain current. DC measurement was used as a quick method to assess the drain current collapse. The degree of current collapse in the samples passivated with two different recipes is discussed in the light of the results, and hypothesis and explanations reported in the literature.
Keywords :
III-V semiconductors; Raman spectra; high electron mobility transistors; plasma CVD; silicon compounds; wide band gap semiconductors; AlGaN-GaN; DC characteristic; DC measurement; HEMT; ICP-CVD; Raman analysis; SiNx; drain current collapse; high electron mobility transistor; inductively coupled plasma-chemical vapour deposition; silicon nitride passivation recipe; stress state; threshold voltage; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Passivation; Wide band gap semiconductors; AlGaN/GaN HEMTs; Current Collapse; Raman analysis; SiN passivation; Threshold Voltage Shift;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151143
