The effect of different silicon nitride passivation recipes on the DC characteristics of AlGaN/GaN HEMTs

Author

Laishram, Robert ; Kumar, Sunil ; Dayal, Sindhu ; Chaubey, Rupesh K. ; Raman, R. ; Sehgal, B.K.

Author_Institution

Solid state Phys. Lab., Defence Res. & Dev. Organ., Delhi, India

fYear

2014

Firstpage

1

Lastpage

4

Abstract

The changes in dc characteristics of AlGaN/GaN HEMT after ICP-CVD silicon nitride (SiN_x) passivation using two different recipes were investigated. Room temperature Raman analysis was performed to determine the stress state of the AlGaN layer after SiN_x passivation. The changes in the stress state of the device after passivation was correlated with the shift in threshold voltage and changes in drain current. DC measurement was used as a quick method to assess the drain current collapse. The degree of current collapse in the samples passivated with two different recipes is discussed in the light of the results, and hypothesis and explanations reported in the literature.

Keywords

III-V semiconductors; Raman spectra; high electron mobility transistors; plasma CVD; silicon compounds; wide band gap semiconductors; AlGaN-GaN; DC characteristic; DC measurement; HEMT; ICP-CVD; Raman analysis; SiN_x; drain current collapse; high electron mobility transistor; inductively coupled plasma-chemical vapour deposition; silicon nitride passivation recipe; stress state; threshold voltage; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Passivation; Wide band gap semiconductors; AlGaN/GaN HEMTs; Current Collapse; Raman analysis; SiN passivation; Threshold Voltage Shift;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151143

Filename

7151143