Title :
Improved parameter extraction technique for GAN HEMT´s small signal model
Author :
Goyal, Umakant ; Mishra, Meena
Author_Institution :
Solid State Phys. Lab., Delhi, India
Abstract :
We have investigated the influence of the reverse transfer conductance Rgd to extract the small signal parameters of GaN high electron mobility transistors (HEMTs) at microwave frequencies. In this paper a simplified method for extracting the small-signal equivalent circuit elements of HEMTs by means of measurements of scattering parameters only is presented. We have calculated the improvement in terms of first and second order error by means of inclusion of a gate drain resistance Rgd into the model. The validity of this method was verified on a set of HEMTs having different gate widths tested on wafer at several biases.
Keywords :
S-parameters; electric admittance; high electron mobility transistors; microwave field effect transistors; semiconductor device models; GaN; GaN HEMT; GaN high electron mobility transistors; gate drain resistance; microwave frequencies; parameter extraction technique; reverse transfer conductance; scattering parameters; small signal parameters; small-signal equivalent circuit elements; Capacitance; Equivalent circuits; HEMTs; Integrated circuit modeling; Logic gates; MODFETs; Scattering parameters; GAN HEMT; parameter extraction; reverse transfer conductance; small signal model;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151144
