Improved parameter extraction technique for GAN HEMT´s small signal model

Author

Goyal, Umakant ; Mishra, Meena

Author_Institution

Solid State Phys. Lab., Delhi, India

fYear

2014

Firstpage

1

Lastpage

3

Abstract

We have investigated the influence of the reverse transfer conductance R_gd to extract the small signal parameters of GaN high electron mobility transistors (HEMTs) at microwave frequencies. In this paper a simplified method for extracting the small-signal equivalent circuit elements of HEMTs by means of measurements of scattering parameters only is presented. We have calculated the improvement in terms of first and second order error by means of inclusion of a gate drain resistance R_gd into the model. The validity of this method was verified on a set of HEMTs having different gate widths tested on wafer at several biases.

Keywords

S-parameters; electric admittance; high electron mobility transistors; microwave field effect transistors; semiconductor device models; GaN; GaN HEMT; GaN high electron mobility transistors; gate drain resistance; microwave frequencies; parameter extraction technique; reverse transfer conductance; scattering parameters; small signal parameters; small-signal equivalent circuit elements; Capacitance; Equivalent circuits; HEMTs; Integrated circuit modeling; Logic gates; MODFETs; Scattering parameters; GAN HEMT; parameter extraction; reverse transfer conductance; small signal model;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151144

Filename

7151144