Analysis of fast and slow trap states on electrical performance of AlGaN/GaN HEMTs

Author

Kaushik, Janesh K. ; Balakrishnan, V. Raman ; Panwar, Brishbhan Singh ; Muralidharan, Rangarajan

Author_Institution

Solid State Phys. Lab., New Delhi, India

fYear

2014

Firstpage

1

Lastpage

3

Abstract

Experimental observations of simultaneous existence of fast and slow trap states in AlGaN/GaN HEMTs are presented here. The presence of traps with time constants (0.1 ms ~ 0.1 s) and activation energies (0.3 eV~0.54 eV) was detected from transconductance dispersion and admittance curves. These fast traps may assist the high gate leakage currents in AlGaN/GaN HEMTs. The slower traps having the time constants of more than 0.1 s, along with faster traps, may be responsible for hysteresis in the observed output I-V characteristics.

Keywords

III-V semiconductors; high electron mobility transistors; hysteresis; localised states; wide band gap semiconductors; AlGaN-GaN; HEMT; I-V characteristic; activation energy; admittance curve; electrical performance; high electron mobility transistor; hysteresis; time constant; transconductance dispersion; trap state; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Temperature measurement; Transconductance; Wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151145

Filename

7151145