Numerical study of the threshold voltage of TFETs with localized charges

Author

Vishnoi, Rajat ; Kumar, M. Jagadesh

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol. Delhi, New Delhi, India

fYear

2014

Firstpage

1

Lastpage

3

Abstract

In this work, a numerical study is carried out on the effects of localized charges on the threshold voltage of a Tunneling Field Effect Transistor (TFET) using 2D TCAD simulations. The localized charges can be generated at the Si-SiO₂ interface by hot carrier effects arising due to high electric fields in the tunneling region of a TFET. The study is carried out with both positive and negative interface charges at the Si-SiO₂ interface of constant density spread over different lengths.

Keywords

electric fields; field effect transistors; hot carriers; silicon; silicon compounds; technology CAD (electronics); tunnel transistors; 2D TCAD simulation; Si-SiO₂; TFET; electric field; hot carrier effect; interface charge; localized charge; threshold voltage; tunneling field effect transistor; Electric fields; Electric potential; Logic gates; MOSFET; Threshold voltage; Tunneling; Hot Carrier Effects; Localized charges; Silicon-on-Insulator (SOI); Threshold Voltage; Tunneling Field Effect Transistor (TFET); Two dimensional (2D) simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151150

Filename

7151150