Title :
Dopingless tunnel FET with a hetero-material gate: Design and analysis
Author :
Ram, M. Saketh ; Abdi, Dawit Burusie
Author_Institution :
Dept. of Electron. & Commun. Eng., M.S. Ramaiah Inst. of Technol., Bangalore, India
Abstract :
We report a two-dimensional simulation study of a dopingless TFET with a hetero-gate dielectric. The energy band gap on the source side is modulated using a hetero-gate-dielectric in a dopingless TFET to increase the source-side tunneling rate. The use of a hetero-gate-dielectric, only on the source side, will ensure that the ambipolar current is not enhanced due to the drain-side tunneling. We demonstrate that the dopingless TFET with a hetero-gate dielectric exhibits an enhanced ON-state current and a reduced subthreshold swing when compared to a conventional dopingless TFET. Since a low thermal budget is required for fabricating the dopingless TFETs, our results indicate that high performance dopingless TFETs can be realized for low-power and low-cost applications using our approach.
Keywords :
dielectric materials; energy gap; field effect transistors; semiconductor doping; tunnel transistors; tunnelling; TFET; ambipolar current; dopingless tunnel field effect transistor; drain-side tunneling; energy band gap; heterogate dielectric; heteromaterial gate; on-state current; source-side tunneling rate; subthreshold swing; thermal budget; Dielectrics; Hafnium compounds; Logic gates; Semiconductor process modeling; Silicon; Transistors; Tunneling; ON-state current; TFET; dopingless; hetero-gate-dielectric; simulation; subthreshold swing; tunneling;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151152
