Title :
Influence of growth paramaters on the crystallinity and stress of SiGe films grown by LPCVD
Author :
Suresh, Madhuri ; Penmetsa, Siva ; Savitha, P.
Author_Institution :
Nat. Nanofabrication Centre, Indian Inst. of Sci., Bangalore, India
Abstract :
SiGe thin layers were deposited using LPCVD at different temperatures and pressures. The effect of the growth characteristics on the composition, grain growth and crystallinity were studied with the aim of maximizing the tensile stress of the films deposited. As expected, at constant reactant gas ratios, temperature had the maximum effect, with stress changing from compressive to tensile at higher temperatures. Films with high crystallinity and large grain sizes were produced at higher temperatures and higher pressures.
Keywords :
Ge-Si alloys; chemical vapour deposition; grain growth; tensile strength; LPCVD growth; SiGe; crystallinity; film stress; grain growth; growth paramaters; tensile stress; Annealing; Films; Grain size; Silicon; Silicon germanium; Stress; Temperature; Scanning electron microscopy; SiGe thin films; cystallinity; stress; surface morphology;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151158
