Title :
Analysis of reverse leakage current in differently passivated AlGaN/GaN HEMTs: A case study
Author :
Tomer, Anushree ; Dayal, Sindhu ; Sharma, Sunil ; Arora, Henika ; Kapoor, Sonalee ; Rawal, D.S. ; Vinayak, Seema
Author_Institution :
Solid States Phys. Lab., Delhi, India
Abstract :
The role of SiNx passivation using two different deposition techniques, namely Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) on gate reverse leakage current of AlGaN/GaN HEMTs was studied. It was observed that devices having PECVD SiNx films exhibit higher leakage than devices with ICPCVD SiNx films. To understand the mechanism behind this behavior, the role of Poole-Frenkel emission on gate reverse leakage current for both the types of passivation schemes was investigated.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; passivation; plasma CVD; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; Poole-Frenkel emission; SiN; deposition techniques; gate reverse leakage current; inductively coupled plasma chemical vapor deposition; passivation; plasma enhanced chemical vapor deposition; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage currents; MODFETs; Passivation; ICPCVD; PECVD; Poole-Frenkel emission; Reverse leakage current;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151172
