Analysis of reverse leakage current in differently passivated AlGaN/GaN HEMTs: A case study

Author

Tomer, Anushree ; Dayal, Sindhu ; Sharma, Sunil ; Arora, Henika ; Kapoor, Sonalee ; Rawal, D.S. ; Vinayak, Seema

Author_Institution

Solid States Phys. Lab., Delhi, India

fYear

2014

Firstpage

1

Lastpage

4

Abstract

The role of SiN_x passivation using two different deposition techniques, namely Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD) and Plasma Enhanced Chemical Vapor Deposition (PECVD) on gate reverse leakage current of AlGaN/GaN HEMTs was studied. It was observed that devices having PECVD SiN_x films exhibit higher leakage than devices with ICPCVD SiN_x films. To understand the mechanism behind this behavior, the role of Poole-Frenkel emission on gate reverse leakage current for both the types of passivation schemes was investigated.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; passivation; plasma CVD; silicon compounds; wide band gap semiconductors; AlGaN-GaN; HEMT; Poole-Frenkel emission; SiN; deposition techniques; gate reverse leakage current; inductively coupled plasma chemical vapor deposition; passivation; plasma enhanced chemical vapor deposition; Aluminum gallium nitride; Gallium nitride; HEMTs; Leakage currents; MODFETs; Passivation; ICPCVD; PECVD; Poole-Frenkel emission; Reverse leakage current;

fLanguage

English

Publisher

ieee

Conference_Titel

Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on

Print_ISBN

978-1-4673-6527-7

Type

conf

DOI

10.1109/ICEmElec.2014.7151172

Filename

7151172