Title :
Electrical characteristics of post-gate-annealed AlGaN/GaN HEMTs on sapphire substrate
Author :
Mahajan, Somna S. ; Tomer, Anushree ; Malik, Amit ; Laishram, Robert ; Agarwal, Vanita R. ; Naik, A.A.
Author_Institution :
Solid State Phys. Lab., Delhi, India
Abstract :
AlGaN/GaN HEMTs were post-gate-annealed at 300°C for 2 min and longer. DC characteristics of AlGaN/GaN HEMTs as a function of annealing cycle duration were studied. Improvement in HEMT parameters such as drain source saturation current, transconductance, gate leakage current and off-state breakdown voltage (Vboff) was observed with increase in annealing duration. This was correlated with surface/interface traps removal, leading to improvement in access region resistance between source-drain and gate drain regions.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium compounds; high electron mobility transistors; sapphire; semiconductor device breakdown; wide band gap semiconductors; Al2O3; AlGaN-GaN; drain source saturation current; gate leakage current; off-state breakdown voltage; sapphire substrate; temperature 300 C; time 2 min; transconductance; Aluminum gallium nitride; Annealing; Gallium nitride; HEMTs; Logic gates; MODFETs; Wide band gap semiconductors; DC characteristics; HEMT; Schottky contact annealing;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151173
