DocumentCode :
3596602
Title :
Understanding evolution of electronic energy bands in low turn-on voltage DACz polymer diodes
Author :
Swathi, S.K. ; Ranjith, K. ; Ramamurthy, Praveen C.
Author_Institution :
Dept. of Mater. Eng., Indian Inst. of Sci., Bangalore, India
fYear :
2014
Firstpage :
1
Lastpage :
4
Abstract :
In this work, energy band structure in a derivative of the conducting polymer carbazole was analyzed by scanning tunneling microscopy and spectroscopy (STM and STS). The band gap formed by evolved energy bands was found by STS to be of 1.7 eV, which may be compared with the electronic bandgap obtained by the bulk DACz diode, which is 0.59 eV. DACz diodes have a very low turn-on voltage of 0.06 V, which makes it very desirable material for the transistor applications. The hole mobility of DACz polymer was observed to be 4×10-6 m2/V.s, which is relatively high for a polymer material.
Keywords :
band structure; conducting polymers; semiconductor diodes; DACz polymer diodes; conducting polymer carbazole; electron volt energy 0.59 eV; electron volt energy 1.7 eV; electronic bandgap; electronic energy bands; energy band structure; polymer material; scanning tunneling microscopy; scanning tunneling spectroscopy; voltage 0.06 V; Films; Morphology; Photonic band gap; Polymers; Scanning electron microscopy; Tunneling; Energy band; Mobility; Polymer diode; Scanning tunneling microscopy; Turn on voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
Type :
conf
DOI :
10.1109/ICEmElec.2014.7151179
Filename :
7151179
Link To Document :
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