Title :
Study of growth of in situ Ga-catalyzed AlGaAs nanostructures using MOVPE technique
Author :
Bag, Rajesh K. ; Lohani, J. ; Tyagi, R. ; Pandya, D.K. ; Singh, R.
Author_Institution :
Solid State Phys. Lab., Delhi, India
Abstract :
In situ Ga-catalyzed AlGaAs nanostructures have been grown by MOVPE. The effect of growth temperature on the shape, size, tapering, and spatial distribution of nanostructures has been investigated using the FESEM technique. Micro-PL measurements have been conducted to analyze the optical quality of the nanostructures. Aluminum composition of around 13% has been estimated by multiple peak-fitting of the PL spectrum.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; field emission electron microscopy; gallium arsenide; nanofabrication; nanostructured materials; photoluminescence; scanning electron microscopy; vapour phase epitaxial growth; AlGaAs; FESEM; MOVPE technique; nanostructured materials; optical quality; photoluminescence; shape distribution; size distribution; spatial distribution; tapering; Epitaxial growth; Gallium arsenide; Nanowires; Substrates; Surface treatment; Temperature measurement; AlGaAs; MOVPE; micro-PL; nanostructures;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151186
