Title :
Growth of high quality InN films and nano-rods grown on GaN nano wall network
Author :
Tangi, Malleswararao ; De, Arpan ; Shivaprasad, S.M.
Author_Institution :
Chem. & Phys. of Mater. Unit, Jawaharlal Nehru Centre for Adv. Sci. Res., Bangalore, India
Abstract :
A two step kinetically controlled single-growth process for the formation of InN 2D flat films and an array of nano rods (NRs) on GaN nano wall network (NWN) template by Plasma Assisted Molecular Beam Epitaxy (PAMBE) is demonstrated here. Surface and bulk diffraction studies reveal that the rods and film exhibit high quality structural and optical properties, in comparison to those formed on bare sapphire or GaN epilayer.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; molecular beam epitaxial growth; nanofabrication; nanorods; plasma deposition; semiconductor epitaxial layers; semiconductor growth; GaN; GaN epilayer; GaN nanowall network template; InN; InN 2D flat films; PAMBE; bare sapphire; high quality InN film growth; nanorod array; nanorod growth; optical properties; plasma assisted molecular beam epitaxy; single-growth process; structural properties; surface diffraction; Absorption; Gallium nitride; Molecular beam epitaxial growth; Optical diffraction; Optical films; Epitaxy; III-nitrides; InN; Molecular Beam epitaxy; Nanowalls;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151191
