Title :
Comprehensive modeling of gas sensor based on Si3N4-passivated AlGaN/GaN Schottky diode
Author :
Das, Subhashis ; Majumder, S. ; Kumar, R. ; Mahata, M.K. ; Dinara, S.M. ; Biswas, D.
Author_Institution :
Adv. Technol. Dev. Centre, Indian Inst. of Technol. Kharagpur, Kharagpur, India
Abstract :
A physics-based analytical modeling for the gas sensor application of AlGaN/GaN heterostructure Schottky diode has been investigated for high linearity and sensitivity of the device. The heterointerface and surface properties are exploited here. The dependency of 2DEG on the surface charge, which is dependent on the Si3N4 passivation layer, is mainly utilized to model the device. The simulation of Schottky diode has been performed in the TCAD tool and I-V curves are generated. From the I-V curves, 54% response has been recorded in presence of 500 ppm gas and at biasing voltage of 0.95 Volts.
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; gallium compounds; gas sensors; passivation; silicon compounds; wide band gap semiconductors; Si3N4-AlGaN-GaN; TCAD tool; current-voltage curves; gas sensor; heterointerface properties; heterostructure Schottky diode; passivated Schottky diode; surface properties; voltage 0.95 V; Aluminum gallium nitride; Gallium nitride; Gas detectors; HEMTs; MODFETs; Wide band gap semiconductors; 2DEG; AlGaN/GaN heterostructure; Schottky diode; gas sensor; modeling; passivation;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151192
