Title :
Electrical characteristics of Pd/ZnO nanowires (NWs)-based Schottky diodes grown on Zn seed layercoated n-Si substrates
Author :
Somvanshi, Divya ; Jit, Satyabrata
Author_Institution :
Dept. of Electron. Eng., Indian Inst. of Technol. (BHU), Varanasi, India
Abstract :
Pd/ZnO Nanowires (NWs)-based Schottky diodes have been fabricated on Zn seed layer-coated n-Si substrates by a simple thermal evaporation method. The surface morphology and crystalline structure of ZnO NWs have been investigated by FESEM and XRD. The Pd/ZnO NWs Schottky diodes exhibit a typical non-linear rectifying behavior with excellent rectification ratio (IF/IR) ~ 7561 at ± 2 V, barrier height ΦB, eff ~ 0.78 eV and ideality factor η ~ 2.10 at room temperature. The value of series resistance has been calculated from the forward bias I-V characteristics using Cheung´s method and Norde method.
Keywords :
II-VI semiconductors; Schottky diodes; X-ray diffraction; crystal structure; evaporation; nanowires; palladium; scanning electron microscopy; silicon; surface morphology; wide band gap semiconductors; zinc; zinc compounds; Cheung method; FESEM; Norde method; Pd-ZnO; Pd-ZnO nanowires; Schottky diodes; XRD; Zn seed layer-coated n-Si substrates; Zn:Si; crystalline structure; electrical characteristics; forward bias I-V characteristics; ideality factor; nonlinear rectifying behavior; rectification ratio; series resistance; simple thermal evaporation; surface morphology; temperature 293 K to 298 K; II-VI semiconductor materials; Resistance; Schottky diodes; Substrates; Surface morphology; Zinc oxide; Nanowires; Schottky barrier diode; seed layer;
Conference_Titel :
Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
Print_ISBN :
978-1-4673-6527-7
DOI :
10.1109/ICEmElec.2014.7151207
