Title :
Novel transparent conductive oxides
Abstract :
P-type metallic transparent oxide was realized in LaCuOSe:Mg with layer type crystal structure. This is a first demonstration of p-type metallic TCO. Although hole concentration goes up to 2/spl times/10/sup 20/cm/sup -3/, the Hall mobility remains 4 cm/sup 2//V-s. Such a high hole mobility was understood by so-called "delta-doping".
Keywords :
Hall mobility; copper compounds; electrical conductivity; hole density; lanthanum compounds; magnesium; semiconductor doping; transparency; wide band gap semiconductors; Hall mobility; LaCuOSe:Mg; crystal structure; delta-doping; hole concentration; p-type metallic transparent oxide;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Print_ISBN :
4-9901816-0-3
