Controlling the defect density in CIGS films

Author

Menezes, Shalini ; Li, Y. ; Menezes, S.J.

Author_Institution

InterPhase Res., Thousand Oaks, CA, USA

Volume

1

fYear

2003

Firstpage

400

Abstract

The sensitivity of CIS-alloys to the deposition parameters and the ambience has been attributed to their Ga content and its deep defect density. This work investigates a chemical approach to maneuver CIGS defects. It develops a simple processing step to reconfigure CIGS defects, aiming at enhanced photovoltaic (PV) efficiency, simpler fabrication and minimum environmental hazard. Photocurrent spectra of CIGS films in an electrolytic medium monitor the effects of surface treatments and specific metal ions. The results provide interesting insights into the effects of stoichiometry and air-oxidation on the defect chemistry of the CIGS film. They could lead to substantial impact on the performance and manufacturing of inexpensively deposited CIGS films.

Keywords

copper compounds; crystal defects; defect states; gallium compounds; indium compounds; oxidation; photoelectron spectra; photovoltaic effects; semiconductor thin films; stoichiometry; surface treatment; ternary semiconductors; Cu(InGa)Se/sub 2/; defect chemistry; defect density; electrolytic medium; enhanced photovoltaic efficiency; environmental hazard; photocurrent spectra; specific metal ion; stoichiometry; surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305304