DocumentCode :
3596937
Title :
Smoother Mo films for molded FEAs by addition of N2 to Ar sputter gas
Author :
Kirk, E. ; Mustonen, A. ; Pomjakushina, E. ; Ritter, S. ; Gobrecht, J. ; Tsujino, S.
Author_Institution :
Paul Scherrer Inst., Villigen, Switzerland
fYear :
2011
Firstpage :
31
Lastpage :
32
Abstract :
Molybdenum field emitter arrays (FEAs) fabricated by molding and a self-aligned gate process have been successfully used to fabricate stacked-double-gate FEAs, and to demonstrate high-acceleration field compatibility, and near infrared laser-induced field-emission. For higher brightness cathodes, we are currently developing nanoscale (300nm emitters, 750 nm pitch) molded molybdenum FEAs. As emitter dimensions approach the grain size for sputtered molybdenum films, roughness in the metal grain structure, for example due to self-shadowing when coating topographic features, becomes increasingly significant for the FEA structures.
Keywords :
argon; field emitter arrays; molybdenum; nitrogen; sputtering; Mo; N2-Ar; high-acceleration field compatibility; molded FEA; molybdenum field emitter arrays; near infrared laser-induced field-emission; self-aligned gate process; sputter gas; stacked-double-gate FEA; Field emitter arrays; Films; Kirk field collapse effect; Logic gates; Scanning electron microscopy; Silicon; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
ISSN :
pending
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
Type :
conf
Filename :
6004547
Link To Document :
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