• DocumentCode
    3596937
  • Title

    Smoother Mo films for molded FEAs by addition of N2 to Ar sputter gas

  • Author

    Kirk, E. ; Mustonen, A. ; Pomjakushina, E. ; Ritter, S. ; Gobrecht, J. ; Tsujino, S.

  • Author_Institution
    Paul Scherrer Inst., Villigen, Switzerland
  • fYear
    2011
  • Firstpage
    31
  • Lastpage
    32
  • Abstract
    Molybdenum field emitter arrays (FEAs) fabricated by molding and a self-aligned gate process have been successfully used to fabricate stacked-double-gate FEAs, and to demonstrate high-acceleration field compatibility, and near infrared laser-induced field-emission. For higher brightness cathodes, we are currently developing nanoscale (300nm emitters, 750 nm pitch) molded molybdenum FEAs. As emitter dimensions approach the grain size for sputtered molybdenum films, roughness in the metal grain structure, for example due to self-shadowing when coating topographic features, becomes increasingly significant for the FEA structures.
  • Keywords
    argon; field emitter arrays; molybdenum; nitrogen; sputtering; Mo; N2-Ar; high-acceleration field compatibility; molded FEA; molybdenum field emitter arrays; near infrared laser-induced field-emission; self-aligned gate process; sputter gas; stacked-double-gate FEA; Field emitter arrays; Films; Kirk field collapse effect; Logic gates; Scanning electron microscopy; Silicon; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
  • ISSN
    pending
  • Print_ISBN
    978-1-4577-1243-2
  • Electronic_ISBN
    pending
  • Type

    conf

  • Filename
    6004547