A low-temperature and patterned-growth technique for tungsten oxide nanowire array

Tungsten oxide nanowire is a very promising cathode nanomaterial, which has exhibited good emission properties. In most preparation methods, the growth temperature is higher than 800°C, which is too high for application in field emission display which used glass as the substrate. Moreover, the selected-area growth of the tungsten oxide is also a challenge. Here we provide a simple method to fabricate patterned WO₂ nanowire at 550°C. The result is of significance for their applications in field emission display.