A 160 mV, fully differential, robust schmitt trigger based sub-threshold SRAM

We propose a novel Schmitt Trigger (ST) based fully differential 10 transistor SRAM (Static Random Access Memory) bitcell suitable for sub-threshold operation. The proposed Schmitt trigger based bitcell achieves 1.56X higher read static noise margin (SNM) (VDD = 400mV) compared to the conventional 6T cell. The robust Schmitt trigger based memory cell exhibits built in process variation tolerance that gives tight SNM distribution across the process corners. It utilizes fully differential operation and hence does not require any architectural changes from the present 6T architecture. At iso-area and iso-read-failure probability the proposed memory bitcell operates at a lower (175mV) VDD with 18% reduction in leakage and 50% reduction in read/write power compared to the conventional 6T cell. Simulation results show that the proposed memory bitcell retains data at a supply voltage of 150mV. Functional SRAM with the proposed memory bitcell is demonstrated at 160mV in 0.13μm CMOS technology.