DocumentCode
3596979
Title
Electron emission from nanocrystalline silicon based MOS cathode under laser irradiation
Author
Shimawaki, Hidetaka ; Neo, Yoichiro ; Mimura, Hidenori ; Wakaya, Fujio ; Takai, Mikio
Author_Institution
Grad. Sch. of Eng., Hachinohe Inst. of Technol., Hachinohe, Japan
fYear
2011
Firstpage
175
Lastpage
176
Abstract
Optically pulsed modulation of a nanocrystalline silicon based silicon metal-oxide-semiconductor cathode fabricated on p-type silicon has been studied using a He-Ne laser mechanically chopped When shining a MOS cathode, the emission current was quickly responded to on-off of the laser. In addition, the energy distributions of emitted electrons were measured.
Keywords
MIS structures; electron emission; elemental semiconductors; nanostructured materials; pulse modulation; HeNe; MOS cathode; electron emission; emission current; energy distribution; laser irradiation; nanocrystalline silicon; optically pulsed modulation; p-type silicon; silicon metal-oxide-semiconductor cathode; Cathodes; Electron beams; Logic gates; Measurement by laser beam; Optical modulation; Silicon; Surface emitting lasers; MOS cathode; modulated electron beam; nanocrystalline silicon; photo-assisted electron emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
ISSN
pending
Print_ISBN
978-1-4577-1243-2
Electronic_ISBN
pending
Type
conf
Filename
6004619
Link To Document