Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma

Author

Hao-Xiang Zhang ; Chun-Min Zhang ; Peng-Fei Wang

Author_Institution

Hangzhou Silan Azure Co. Ltd., Hangzhou, China

fYear

2015

Firstpage

1

Lastpage

3

Abstract

Ruthenium dioxide (RuO₂) thin films can be used as the electrode material for future technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films of RuO₂ on SiO₂ using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)₂] as the precursor and oxygen (O₂) plasma as the reducing agent. The thermal stability of the deposited films were investigated in the N₂ ambient and in the forming-gas environments using rapid thermal processing (RTP). High-resolution transmission electron microscope (HR-TEM) and atomic force microscopy (AFM) were also employed to explore the growth mechanism of the RuO₂ thin films on SiO₂.

Keywords

atomic force microscopy; atomic layer deposition; electrodes; oxygen; plasma; ruthenium compounds; semiconductor thin films; silicon compounds; thermal stability; transmission electron microscopes; AFM; ALD; HR-TEM; O₂; RTP; Ru(EtCp)₂; RuO₂; SiO₂; atomic force microscopy; atomic layer deposition; bis-(ethylcyclopentadienyl)-ruthenium; electrode material; forming-gas environment; high-resolution transmission electron microscope; oxygen plasma; rapid thermal processing; reducing agent; ruthenium dioxide thin film; thermal stability; Atomic layer deposition; Electrodes; Films; Plasmas; Rapid thermal processing; Stability analysis; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153392

Filename

7153392