DocumentCode
3597320
Title
Power and frequency characteristics of Gunn diodes with two active regions InP/sub 0.7/As/sub 0.3/-In/sub 0.4/Ga/sub 0.6/As
Author
Arkusha, Yu V. ; Prokhorov, E.D. ; Storozhenko, I.P.
Author_Institution
Kharkiv Nat. Univ., Ukraine
fYear
2001
Firstpage
160
Lastpage
161
Abstract
A new highly effective Gunn diode is offered. The power and frequency characteristics of Gunn diodes with two active regions (InP/sub 0.7/As/sub 0.3/-In/sub 0.4/Ga/sub 0.6/As) are calculated. The greatest efficiency /spl sim/14% and flow of target capacity /spl sim/15.5 kW/cm/sup 2/ are received on the diode with blocking metal cathode at frequency /spl sim/55 GHz; the width frequency of a range is /spl sim/53 GHz (from /spl sim/30 GHz up to /spl sim/83 GHz).
Keywords
Gunn diodes; III-V semiconductors; cathodes; gallium arsenide; indium compounds; power semiconductor diodes; 14 percent; 30 to 83 GHz; 55 GHz; Gunn diodes; III V semiconductors; InP/sub 0.7/As/sub 0.3/-In/sub 0.4/Ga/sub 0.6/As; active regions; blocking metal cathode; efficiency; frequency characteristics; target capacity; width frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2001. CriMiCo 2001. 11th International Conference on
Print_ISBN
966-7968-00-6
Type
conf
Filename
1173752
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