Title :
Sensitivity of nanostructured Al-doped ZnO-based CH4 sensor fabricated using sol-gel method
Author :
Shafura, A.K. ; Sin, N. D. Md ; Azhar, N.E.A. ; Uzer, M. ; Mamat, M.H. ; Alrokayan, Salman A. H. ; Khan, Haseeb A. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA (UiTM), Shah Alam, Malaysia
Abstract :
The atomic force microscopy (AFM) morphologies and electrical properties of the nanostructured Aluminium (Al) doped Zinc Oxide (ZnO) thin films prepared at various thicknesses were investigated. The films were prepared by sol-gel spin-coating method to fabricate ZnO-based sensors. The sensitivity upon exposure to methane (CH4) gas at room temperature was investigated. The results show that the lowest resistivity of 0.752 × 106 Ω-cm was obtained for the ZnO nanostructures prepared at thickness of 170 nm. It also display highest sensitivity value which is 30%.
Keywords :
II-VI semiconductors; aluminium; atomic force microscopy; gas sensors; nanofabrication; nanosensors; nanostructured materials; sol-gel processing; spin coating; thin film sensors; zinc compounds; AFM; ZnO:Al; atomic force microscopy; electrical properties; methane gas sensor fabrication; nanostructured thin film preparation; size 170 nm; sol-gel spin coating method; Conductivity; Films; Gas detectors; II-VI semiconductor materials; Sensitivity; Temperature sensors; Zinc oxide; AFM morphologies; Al-doped ZnO; electrical properties; methane gas; sensitivity;
Conference_Titel :
Electrical, Electronics and System Engineering (ICEESE), 2014 International Conference on
DOI :
10.1109/ICEESE.2014.7154614
