DocumentCode :
3597721
Title :
Advanced Semiconductor Impact on Distributed Generation, Energy Storage and the Utility Grid
Author :
Borowy, B.S. ; Casey, L.F. ; Davis, G.H. ; Rajda, J. ; Schauder, C.D.
Author_Institution :
Gen. Atomics, San Diego, CA
fYear :
2007
Firstpage :
1
Lastpage :
8
Abstract :
This paper examines some of the weaknesses of the modern utility grid and discusses the likelihood that wide band gap (WBG) semiconductors will significantly impact the arena of grid electronics. Certainly existing applications will benefit from improved efficiency and reliability and, where required, reduced volume and weight. Meanwhile, the advent of truly high-voltage, high-frequency, high-temperature and low loss electronics will open up many new applications in the utility grid. The state of the art of these advanced semiconductors is discussed in addition to the opportunities for expanded functionality in grid electronics, solid-state replacements for electromechanical devices such as protective relays and new protection technologies such as solid state current limiting.
Keywords :
distributed power generation; energy storage; power grids; power semiconductor devices; advanced semiconductor impact; distributed generation; electromechanical devices; energy storage; grid electronics; protective relays; solid state current limiting; solid-state replacements; utility grid; wide band gap semiconductors; Couplings; Distributed control; Distributed power generation; Energy storage; Impedance; Mesh generation; Power generation; Power system interconnection; Protection; Synchronous generators; Active Filter; Distributed Generation; Grid Connect; Inverter; Reactive Power; Silicon Carbide; Wide Band Gap;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Engineering Society General Meeting, 2007. IEEE
ISSN :
1932-5517
Print_ISBN :
1-4244-1296-X
Electronic_ISBN :
1932-5517
Type :
conf
DOI :
10.1109/PES.2007.386254
Filename :
4276020
Link To Document :
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