Application of indium ion implantation for halo doping: experimental and simulation results for advanced CMOS devices

Author

Variam, N. ; Mehta, S. ; Feudel, T. ; Horstmann, M. ; Krueger, C. ; Ng, C. ; Posselt, M.

Author_Institution

Varian Semicond. Equip. Assoc. Inc., Gloucester, MA, USA

fYear

2000

fDate

6/22/1905 12:00:00 AM

Firstpage

42

Lastpage

45

Abstract

Properties of indium, relevant to halo implantation, are examined. Compared to conventional ions (B⁺ and P⁺) heavy ions show lower range profile straggling and reduced dopant diffusion. The channeling behavior of indium ions implanted at high tilt angle is examined as a function of wafer azimuthal orientation angle. Dopant profiles show a very good agreement with calibrated atomistic simulations. In addition, calculations demonstrate that the damage produced by indium doping reduces the channeling of subsequent extension arsenic implant. For an aggressive halo with low energy indium implant, simulated saturation threshold voltage is sensitive to small implant angle variations

Keywords

CMOS integrated circuits; MOSFET; channelling; doping profiles; elemental semiconductors; indium; ion implantation; semiconductor device models; semiconductor doping; silicon; Si:In; advanced CMOS devices; channeling; dopant diffusion; dopant profiles; halo doping; heavy ions; ion implantation; profile straggling; saturation threshold voltage; tilt angle; wafer azimuthal orientation angle; Atomic measurements; Boron; Implants; Indium; Ion implantation; Process control; Semiconductor device doping; Semiconductor process modeling; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924085

Filename

924085