Steady-state, direct-current (DC) plasma immersion ion implantation (PIII) for planar samples

Author

Zeng, Xuchu ; Kwok, Dixon T.K. ; Chu, Paul K. ; Chan, Chung ; Cheung, Nathan W.

Author_Institution

Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, Kowloon, China

fYear

2000

fDate

6/22/1905 12:00:00 AM

Firstpage

515

Lastpage

519

Abstract

A new direct current (DC) plasma immersion ion implantation (PIII) technique by using a grounded conduction grid positioned between the plasma source and sample chuck is described in this paper. DC-PIII is simulated employing the particle-in-cell (PIC) method. Our simulation shows that the ion paths do not change with the negative voltage applied to the wafer stage as well as the mass and charge states of the ions. The ion dose and impact energy uniformity is determined by the internal ratio between the r (radius of sample platen), R (radius of vacuum chamber), H (distance between the grid and bottom of the vacuum chamber), and D (thickness of sample platen). Our simulation suggests that the best ratio is r:R:H:D=1:4:2.5:2. Our experimental results show that high voltage DC-PIII can be realized by using a conducting grid in a conventional PIII system

Keywords

ion implantation; ion sources; plasma materials processing; DC plasma immersion ion implantation; grounded conduction grid; impact energy uniformity; ion dose; negative voltage; particle-in-cell method; platen thickness; vacuum chamber dimensions; Computational modeling; Elementary particle vacuum; Fabrication; Plasma immersion ion implantation; Plasma sheaths; Plasma sources; Pulsed power supplies; Silicon; Steady-state; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology, 2000. Conference on

Print_ISBN

0-7803-6462-7

Type

conf

DOI

10.1109/.2000.924201

Filename

924201