Title :
Performance of a new Schottky CdTe detector for hard X-ray spectroscopy
Author :
Matsumoto, C. ; Takahashi, T. ; Takizawa, K. ; Ohno, R. ; Ozaki, T. ; Mori, K.
Author_Institution :
Inst. of Space & Astron. Sci., Kanagawa, Japan
Abstract :
We report the significant improvement of the spectral properties of a cadmium telluride (CdTe) detector. With the use of a high quality CdTe crystal, we formed a high Schottky barrier for the holes on a CdTe surface by using a low work-function metal, indium. With a 2×2 mm 2 detector at a thickness of 0.5 mm, the leakage current is measured to be 0.7 nA at room temperature (20°) and below 1 pA at -70°C for 400 V bias voltage. The low leakage current of the detector allows us to operate the detector at a higher bias voltage than the previous CdTe detector. The energy resolution we achieved at room temperature is 1.1-2.5 keV FWHM from the energy range of 2 keV to 150 keV at 20°C without any charge-loss correction electronics. At -70°C. We obtained an energy resolution of 1.0 keV FWHM at 122 keV and 2.1 keV FWHM at 662 keV
Keywords :
II-VI semiconductors; Schottky barriers; X-ray detection; X-ray spectroscopy; cadmium compounds; semiconductor counters; -70 C; 0.7 nA; 20 C; 400 V; CdTe; Schottky detector; energy resolution; hard X-ray spectroscopy; high Schottky barrier; leakage current; room temperature; spectral properties; Cadmium compounds; Current measurement; Energy resolution; Indium; Leak detection; Leakage current; Schottky barriers; Voltage; X-ray detection; X-ray detectors;
Conference_Titel :
Nuclear Science Symposium, 1997. IEEE
Print_ISBN :
0-7803-4258-5
DOI :
10.1109/NSSMIC.1997.672647