Title :
Electric field manipulated nonvolatile and reversible 90°-rotation of the magnetic easy-axis in LSMO/PMN-PT (011) multiferroic heterostructures
Author :
Zhao, W. ; Yang, S. ; Huang, W. ; Feng, L. ; Zhang, D. ; Hu, Q. ; Yin, Y. ; Dong, S. ; Li, X.
Author_Institution :
Dept. of Phys., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
Using pure electric voltages instead of magnetic fields or large currents to manipulate magnetisms in multiferroic heterostructures is a goal for future low-power spintronics such as electric-writing magnetic-reading memories. Usually, the electric manipulation to magnetism shows a volatile effect which cannot be used for information storage,[1] because the magnetic variation vanishes after the electric field removal. Recently, the piezostrain-mediated non-volatile 90° and 180° magnetization rotations are realized in the Co/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 multiferroic heterostructures at room temperature.[2] However, the non-volatile magnetization rotations in perovskite manganese systems, which are of significance for the design of perovskite magnetic random access memories such as perovskite magnetic tunneling junctions, are still rarely studied. Here we report an in-situ electric field manipulated nonvolatile and reversible 900-rotation of the magnetic easy-axis (MEA) in La0.7Sr0.3MnO3/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (LSMO/PMN-PT) multiferroic heterostructure.
Keywords :
lanthanum compounds; lead compounds; magnetic storage; magnetic tunnelling; magnetisation; magnetoelectronics; multiferroics; random-access storage; strontium compounds; La0.7Sr0.3MnO3-PMN-PbTiO3; electric field manipulated nonvolatile-reversible rotation; electric field removal; electric manipulation; electric-writing magnetic-reading memories; low-power spintronics; magnetic easy-axis; magnetic fields; multiferroic heterostructures; perovskite magnetic random access memories; perovskite magnetic tunneling junctions; perovskite manganese systems; piezostrain-mediated nonvolatile magnetization rotations; temperature 293 K to 298 K; volatile effect; Electric fields; Films; Magnetic tunneling; Magnetization; Nonvolatile memory; Perpendicular magnetic anisotropy;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7156527