Title :
Thermal stability of nickel silicide films in submicron p-type polysilicon lines
Author :
Poon, M.C. ; Deng, F. ; Wong, H. ; Chan, M. ; Sin, J.K.O. ; Lau, S.S. ; Ho, C.H. ; Han, P.G.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fDate :
8/30/1997 12:00:00 AM
Abstract :
In this work, we found that very low resistivity NiSi can be thermally stable and is independent of linewidth for deep submicron p-type poly-Si lines up to 700-750°C for 0.5 and 1 hr annealing, and for linewidths as narrow as 0.2-0.1 μm. It widens the thermal budget windows and process tolerance for NiSi and further suggests that NiSi is a very promising contact material candidate for future ULSI devices
Keywords :
ULSI; annealing; contact resistance; integrated circuit metallisation; nickel compounds; thermal stability; 0.1 to 0.2 micron; 0.5 hr; 1 hr; 700 to 750 degC; NiSi-Si; ULSI devices; annealing; contact material; contact resistance; linewidths; process tolerance; resistivity; submicron p-type polysilicon lines; thermal budget windows; thermal stability; Annealing; Conductivity; Etching; Nickel; Scanning electron microscopy; Semiconductor films; Silicides; Silicon compounds; Substrates; Thermal resistance; Thermal stability; Ultra large scale integration;
Conference_Titel :
Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong
Print_ISBN :
0-7803-3802-2
DOI :
10.1109/HKEDM.1997.642330
