Title :
Maskless anisotropic etching-a novel micromachining technology for multilevel microstructures
Author :
Li, Xinxin ; Bao, IMinhang ; Shen, Shaoqun
Author_Institution :
Dept. of Electron. Eng., Fudan Univ., Shanghai, China
Abstract :
The authors describe a novel bulk micromachining technology for silicon multilevel microstructures using a maskless etching following a masked etch in aqueous KOH. Deep multilevel structures with {311} sidewalls and <110> edges can be formed on a (001) silicon wafer and the number of levels is not limited in principle. The positions and the depths of individual levels are determined by the design for one mask and the masked-maskless etching process. The technology is likely to be very useful in micromechanical sensors and actuators
Keywords :
elemental semiconductors; etching; microactuators; micromachining; microsensors; silicon; ⟨110⟩ edges; (001) Si wafer; KOH; Si; Si multilevel microstructures; aqueous KOH; bulk micromachining technology; deep multilevel structures; masked etch; maskless anisotropic etching; micromechanical actuators; micromechanical sensors; {311} sidewalls; Actuators; Anisotropic magnetoresistance; Etching; Ion implantation; Micromachining; Microstructure; Silicon; Transistors;
Conference_Titel :
Solid State Sensors and Actuators, 1997. TRANSDUCERS '97 Chicago., 1997 International Conference on
Print_ISBN :
0-7803-3829-4
DOI :
10.1109/SENSOR.1997.613748
