Title :
Direct phonon excitation in semiconductors by ultrashort intense THz radiation
Author :
Manceau, J.-M. ; Loukakos, P.A. ; Tzortzakis, S.
Author_Institution :
Inst. of Electron. Struct. & Laser, Found. for Res. & Technol.-Hellas, Heraklion, Greece
Abstract :
Ultrashort intense THz radiation generated through laser filamentation in air is employed to directly excite the lattice of AlGaAs semi-insulating crystals. Incoherent as well as coherent phonons are shown to be excited in this way.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical pulse generation; phonons; terahertz waves; AlGaAs; coherent phonons; direct phonon excitation; laser filamentation generation; semiinsulating crystals; ultrashort intense THz radiation; Laser excitation; Lattices; Nonlinear optics; Optical pulse generation; Phonons; Photonic band gap; Probes; Pulse amplifiers; Semiconductor lasers; Spectroscopy; (300.6495) Spectroscopy, Terahertz; (300.6500) Spectroscopy, time-resolved; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
