Title :
8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band
Author :
Caliman, A. ; Iakovlev, V. ; Mereuta, A. ; Sirbu, A. ; Suruceanu, G. ; Kapon, E.
Author_Institution :
Swiss Fed. Inst. of Technol., EPFL, Lausanne, Switzerland
Abstract :
Record fundamental mode output power of 8 mW at 0degC and 6.5 mW at room temperature is achieved with wafer-fused VCSELs incorporating regrown tunnel junction and emitting at the 1550 nm waveband.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser modes; quantum well lasers; surface emitting lasers; tunnelling; InAlGaAs-InP; fundamental mode output; power 6.5 mW; power 8 mW; temperature 0 C; temperature 293 K to 298 K; tunnel junction; wafer-fused VCSEL; wavelength 1550 nm; Vertical cavity surface emitting lasers; (140.0140) Lasers and laser optics; (140.5960) Semiconductor lasers; (140.7260) Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
