Title :
Reduction of Residual Carbon in GaAsN Films Grown by Chemical Beam Epitaxy
Author :
Suzuki, Hidetoshi ; Nishimura, Kenichi ; Lee, Hae-Seok ; Saito, Kenji ; Kawahigashi, Tetsuya ; Imai, Takahiro ; Ohshita, Yoshio ; Yamaguchi, Masafumi
Author_Institution :
Toyota Technol. Inst., Nagoya
fDate :
5/1/2006 12:00:00 AM
Abstract :
Crystal quality of GaAsN films can be improved by using chemical beam epitaxy method for low-temperature growth. However, low-temperature growth increases carbon (C) incorporation in the films, which degrades their electrical properties. To reduce the C concentration in the films, C incorporation process was investigated in view of the surface reaction of nitrogen (N) sources on a substrate surface, and monomethylhydrazine (MMHy) and 1,1-dimethylhydrazine (DMHy) were compared. When MMHy was used as an N source, the C concentration in GaAsN drastically increases below 380degC than that in GaAs due to insufficient CHX desorption. In the case of DMHy, N(CH3)2 is desorbed more readily than CHX. Therefore, the C concentration can then be reduced by using DMHy
Keywords :
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; semiconductor epitaxial layers; semiconductor growth; surface chemistry; 1,1-dimethylhydrazine; DMHy; GaAsN; MMHy; chemical beam epitaxial growth; electrical properties; low-temperature growth; monomethylhydrazine; residual carbon; semiconductor films; surface reaction; Chemical technology; Degradation; Epitaxial growth; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical films; Substrates; Temperature; Transistors;
Conference_Titel :
Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on
Print_ISBN :
1-4244-0017-1
Electronic_ISBN :
1-4244-0017-1
DOI :
10.1109/WCPEC.2006.279582
