Title :
Dependence of transfer characteristic of amorphous oxide semiconductor thin-film transistors on the channel thickness evaluated by device simulation
Author :
Matsuda, Tokiyoshi ; Kimura, Mutsumi ; Wang, Dapeng ; Li, Chaoyang ; Furuta, Mamoru
Author_Institution :
Dept. of Electron. & Inf., Ryukoku Univ., Otsu, Japan
Abstract :
Enhancement of subthreshold swing with increasing the channel layer thickness of bottom gate top contact type amorphous oxide TFT were evaluated by 2D device simulation with trap states induced in backchannel. The distance between the channel and the trap states induced in backchannel would be the main reason for the enhancement of the subthreshold swing. This effect is similar to one of the oxide TFTs.
Keywords :
II-VI semiconductors; amorphous semiconductors; carrier density; indium compounds; semiconductor thin films; thin film transistors; tin compounds; wide band gap semiconductors; zinc compounds; 2D device simulation; InSnZnO; amorphous oxide semiconductor thin-film transistors; bottom gate top contact-type amorphous oxide TFT; device simulation; subthreshold swing; transfer characteristics; trap states; Educational institutions; Electrodes; Films; Flat panel displays; Logic gates; Thin film transistors; Zinc oxide;
Conference_Titel :
Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on
Print_ISBN :
978-1-4673-0399-6
